Home / Relay / Panasonic Relays / Panasonic PhotoMOS 6 Pin / Panasonic PhotoMOS 6 Pin: AQV DIP Form B Reinforced Isolation
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Normally closed DIP6-pin economic type with reinforced insulation
Features
High cost-performance type of PhotoMOS relay 1 Form B output
60V type couples high capacity (0.55A) with low on-resistance (typ. 1).
Low on-resistance
This has been realized thanks to the built-in MOSFET processed by our proprietary method, DSD (Doublediffused and Selective Doping) method.
Controls low-level analog signals
PhotoMOS relays feature extremely low closed-circuit offset voltage to enable control of low-level analog signals without distortion.
High sensitivity and low onresistance
Can control max. 0.55 A load current with 5 mA input current. Low on-resistance of typ. 1 (AQV412EH).
Low-level off-state leakage current of max. 1 A (AQV414E)
Reinforced insulation 5,000 V type also available
More than 0.4 mm internal insulation distance between inputs and outputs. Conforms to EN41003, EN60950 (reinforced insulation).
Typical applications
Power supply
Measuring equipment
Security equipment
Telephone equipment
Sensing equipment