f Panasonic PhotoMOS 6 Pin: AQV DIP Form B Reinforced Isolation- A&S Automation Co., Ltd
 
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Normally closed DIP6-pin economic type with reinforced insulation












Features







  • High cost-performance type of PhotoMOS relay 1 Form B output 





  • 60V type couples high capacity (0.55A) with low on-resistance (typ. 1). 





  • Low on-resistance


    This has been realized thanks to the built-in MOSFET processed by our proprietary method, DSD (Doublediffused and Selective Doping) method.












  • Controls low-level analog signals


    PhotoMOS relays feature extremely low closed-circuit offset voltage to enable control of low-level analog signals without distortion.





  • High sensitivity and low onresistance


    Can control max. 0.55 A load current with 5 mA input current. Low on-resistance of typ. 1 (AQV412EH).





  • Low-level off-state leakage current of max. 1 A (AQV414E) 





  • Reinforced insulation 5,000 V type also available


    More than 0.4 mm internal insulation distance between inputs and outputs. Conforms to EN41003, EN60950 (reinforced insulation).







Typical applications







  • Power supply 





  • Measuring equipment 





  • Security equipment 





  • Telephone equipment 





  • Sensing equipment










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